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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Power-Down
Power-Down
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is a
row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting t CKS).
Figure 49: Power-Down Mode
CLK
T0
tCK
T1
T2
tCL
tCKS
tCH
( (
) )
( (
) )
Tn + 1
tCKS
Tn + 2
CKE
tCKS
tCKH
( (
) )
Command
tCMS tCM H
PRECHARGE
NOP
NOP
( (
) )
( (
) )
NOP
ACTIVE
DQM
( (
) )
( (
) )
Address
( (
) )
( (
) )
Row
A10
BA0, BA1
DQ
All banks
Single bank
t AS tAH
Bank(s)
High-Z
Two clock cycles
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
Input buffers gated off
All banks idle
Row
Bank
while in power-down mode
Precharge all
active banks
All banks idle, enter
power-down mode
Exit power-down mode
Don’t Care
Note:
1. Violating refresh requirements during power-down may result in a loss of data.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
80
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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